STPSC8065 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPSC8065

4/9

DocID030730 Rev 2

1.1

Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 3: Peak forward current versus case

temperature

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 6: Non-repetitive peak surge forward

current versus pulse duration

(sinusoidal waveform)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

a=150 °C

a=175 °C

a=25 °C

Pulse test : t

p=500µs

a=100 °C

VF(V)

IF(A)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 150 200 250 300 350 400 450 500 550 600 650

j=25 °C

j=150 °C

j=175 °C

VR(V)

IR(µA)

100

125

150

175

δ=tp/T

δ = 1

δ = 0.5

δ = 0.1

δ = 0.3

δ = 0.7

IM(A)

TC(°C)

100

200

300

400

500

600

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

OSC=30 mVRMS

j=25 °C

VR(V)

Cj(pF)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Zth(j-c) /Rth(j-c)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

a=25 °C

a=125 °C

tp(s)

IFSM(A)

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