2

Radiation

The technology of the STMicroelectronics Rad-Hard rectifier’s diodes is intrinsically highly resistant to radiative

environments.

The product radiation hardness assurance is supported by a Total Ionisation Dose (TID) test at high dose rate on

each diffusion lot and a Single Effect Event (SEE) characterization.

2.1

Total dose radiation (TID) testing

Each diffusion lot is tested in total ionizing dose at high dose rate on 10 parts housed in SMD1, 5 biased and 5

unbiased.

The irradiation is done according to the ESCC 22900 specification, standard window.

Both pre-irradiation and post-irradiation performances are tested using the same circuitry and test conditions for a

The following parameters are measured :

•

Before irradiation

•

After irradiation (target 1 Mrad (Si))

•

After 24 hrs at room temperature

•

after 168 hrs at 100 °C anneal

2.2

Single event effect

The Single Event Effect (SEE) relevant to power rectifiers are characterized, i.e. the Single Event Burnout (SEB).

The tests are performed as per ESCC 25100, each one on 3 pieces from 1 wafer at room temperature.

The accept/reject criteria are :

•

SEB (Destructive mode):

The diode is reverse biased during irradiation. The test is stopped as soon as a SEB occurs or when the

reverse leakage current is above the specification or when the overall influence on the component reaches

1E7 cm².

•

PIST (Post-Irradiation STress) test:

After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated

devices.

Type

Conditions

Result

Total ionisation dose

High dose rate

5 biased + 5 unbiased

Each wafer lot

Immune up to 1 Mrad(Si)

Single Effect Burnout

LET= Tbd

No burnout

STTH60400HR

Radiation

DS11815 - Rev 3

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