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UN217 Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part # UN217
Description  Transistor array to drive the small motor
PDF  3 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UN217 Datasheet(HTML) 2 Page - Panasonic Semiconductor

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Small Signal Transistor Arrays
s Electrical Characteristics (Ta=25±2˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
(NPN) VCB = 10V
1
µA
(PNP) VCB = –10V
–1
Collector to base voltage
VCBO
(NPN) IC = 10µA12
V
(PNP) IC = –10µA
–12
Collector to emitter voltage
VCEO
(NPN) IC = 1mA
10
V
(PNP) IC = –1mA
–10
Emitter to base voltage
VEBO
(NPN) IE = 10µA7
V
(PNP) IE = –10µA–7
Forward current transfer ratio
hFE
(NPN) VCE = 1V, IC = 0.5A*
200
800
(PNP) VCE = –1V, IC = – 0.5A*
200
800
Collector to emitter saturation voltage
VCE(sat)1
(NPN) IC = 1A, IB = 30mA
0.3
V
(PNP) IC = –1A, IB = –30mA
– 0.3
Transition frequency
fT
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
150
MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
150
Collector output capacitance
Cob
(NPN) VCB = 10V, IE = 0, f = 1MHz
50
pF
(PNP) VCB = –10V, IE = 0, f = 1MHz
65
Forward voltage (DC)
VF
(NPN) IF = 1A
1.5
V
(PNP) IF = –1A
–1.5
*Pulse measurement
Characteristics charts of PNP transistor block
PT — Ta
IC — VCE
IC — VBE
UN217
0
0
160
20
60
100
140
40
120
80
0.6
0.5
0.4
0.3
0.2
0.1
Ambient temperature Ta (˚C)
0
0
–12
– 2
–10
–4
–8
–6
–4.8
–4.0
–3.2
–2.4
–1.6
–0.8
Collector to emitter voltage VCE (V)
Ta=25˚C
– 2mA
– 4mA
– 6mA
– 8mA
–12mA
–10mA
IB= –14mA
0
–6
–5
–4
–3
–2
–1
Base to emitter voltage VBE (V)
0– 2.4
–0.4
–2.0
– 0.8
–1.6
–1.2
VCE= –1V
Ta=75˚C
– 25˚C
25˚C



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