UN222 datasheet(2/5 Pages) PANASONIC

2 / 5 page

UNA0222

SJK00046BED

■ Electrical Characteristics T

a = 25°C ± 3°C

• PNP

• NPN

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−10

Collector-emitter voltage (Base open)

VCEO

= −1 mA, I

= 0

−10

Collector-base cutoff current (Emitter open)

ICBO

VCB = −6 V, IE = 0

−1

µA

Forward current transfer ratio

hFE

VCE = −1 V, IC = − 0.5 A

200

700



Collector-emitter saturation voltage

VCE(sat)

= −2 A, I

= −50 mA

− 0.45

Transition frequency

VCB = −6 V, IE = 50 mA, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB = −6 V, IE = 0, f = 1 MHz

(Common base, input open circuited)

Forward voltage *

IF = −1 A

−1.5

Bias resistance *

REB

−30%

+30%

Ω

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 10 µA, IE = 010

Collector-emitter voltage (Base open)

VCEO

= 1 mA, I

= 010

Collector-base cutoff current (Emitter open)

ICBO

VCB = 6 V, IE = 01

µA

Forward current transfer ratio

hFE

VCE = 1 V, IC = 0.5 A

200

700



Collector-emitter saturation voltage

VCE(sat)

= 2 A, I

= 50 mA

0.25

Transition frequency

VCB = 6 V, IE = −50 mA, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB = 6 V, IE = 0, f = 1 MHz

(Common base, input open circuited)

Forward voltage *

IF = 1 A

1.5

Bias resistance *

REB

−30%

+30%

Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Application to the built-in diode

*2: Application to the built-in resistance

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