UN228 datasheet(2/5 Pages) PANASONIC

2 / 5 page

UNA0228

SJK00049BED

■ Electrical Characteristics T

a = 25°C ± 3°C

• PNP

• NPN

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−12

Collector-emitter voltage (Base open)

VCEO

= −1 mA, I

= 0

−10

Emitter-base voltage (Collector open)

VEBO

IE = −10 µA, IC = 0

−7V

Collector-base cutoff current (Emitter open)

ICBO

VCB = −10 V, IE = 0

−1

µA

Forward current transfer ratio *

hFE

VCE

= −1 V, I

= − 0.5 A

200

800



Collector-emitter saturation voltage *

VCE(sat)

IC = −1 A, IB = −30 mA

− 0.2

− 0.3

Transition frequency

VCB = −6 V, IE = 50 mA, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB

= −10 V, I

= 0, f = 1 MHz

(Common base, input open circuited)

Forward voltage *

= −1 A

−1.5

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 10 µA, IE = 012

Collector-emitter voltage (Base open)

VCEO

= 1 mA, I

= 010

Emitter-base voltage (Collector open)

VEBO

IE = 10 µA, IC = 07

Collector-base cutoff current (Emitter open)

ICBO

VCB = 10 V, IE = 01

µA

Forward current transfer ratio *

hFE

VCE

= 1 V, I

= 0.5 A

200

800



Collector-emitter saturation voltage *

VCE(sat)

IC = 1 A, IB = 30 mA

0.2

0.3

Transition frequency

VCB = 6 V, IE = −50 mA, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

(Common base, input open circuited)

Forward voltage *

= 1 A

1.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Application to the built-in diode

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