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S1DF Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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S1DF Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
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1 / 2 page ![]() S1AF THRU S1MF Features · For surface mounted applications · Low profile package · Glass passivated chip junction · Easy to pick and place · Lead free in comply with EU RoHS 2011/65/EU directives Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Notes: (1) Measured at 1MHz and applied reverse voltage of 4V D.C (2) P.C.B mounted with 0.2 X 0.2” (5 x 5 mm) copper pad areas. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) VDC Maximum average forward rectified current at Ta=65℃ V Symbols Units VF VRMS A IFSM TJ, TSTG ℃ A Maximum DC reverse current at rated DC blocking voltage Maximum instantaneous forward voltage at 1A Typical thermal resistance V μA ℃/W TA=25℃ TA=125℃ Typical junction capacitance RθJA IR Items Mechanical Data · Case : SMAF · Terminals : Solderable per MIL-STD-750, Method 2026 · Weight : 0.027 gram (approx.) VRRM IF(AV) V V 1 Dimensions in inches and (millimeters) S1AF 50 35 50 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 30 1.1 50 5 4 -55 to +150 7 ο 7 ο Operating and storage temperature range STANDARD RECTIFIER CURRENT 1.0 A VOLTAGE 50 to 1000 V CJ 180 100 70 100 pF S1BF S1DF S1GF S1JF S1KF S1MF SMAF 0.094(2.40) 0.106(2.70) 0.173(4.40) 0.193(4.90) 0.035(0.90) 0.043(1.10) 0.0047(0.12) 0.0079(0.20) 0.031(0.80) 0.047(1.20) 0.130(3.30) 0.146(3.70) 0.031(0.80) 0.047(1.20) 0.051(1.30) 0.063(1.60) 0.094(2.40) 0.106(2.70) (NOTE 1) (NOTE 2) https://dec.co.kr DAESAN ELECTRONIC CORP. |
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