Characteristics

FERD20L60C

2/12

DocID030962 Rev 1

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 130 °C

Per diode

10

A

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

140

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

+150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

2.2

°C/W

Total

1.3

Rth(c)

Coupling

0.4

Table 4: Static electrical characteristics, per diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

970

µA

Tj = 125 °C

-

30

60

mA

Tj = 125 °C

VR = 45 V

-

17

34

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

-

0.305

0.35

V

Tj = 125 °C

-

0.25

0.29

Tj = 25 °C

IF = 5 A

-

0.38

0.425

Tj = 125 °C

-

0.365

0.415

Tj = 25 °C

IF = 10 A

-

0.48

0.535

Tj = 125 °C

-

0.51

0.575

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.255 x IF(AV) + 0.032 x IF2(RMS)