K

NC

A

D²PAK HV

A

K

A

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

High forward surge capability

•

Operating Tj from -40 °C to 175 °C

•

Power efficient product

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK2 compliant component

Applications

•

Telecom power supply

•

Server power supply

•

Switch mode power supply

•

DCDC converters

•

LLC topologies

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC10H065G2 will boost performances in hard switching conditions. Its high

forward surge capability ensures good robustness during transient phases.

Product label

Product status

STPSC10H065G2

Product summary

Symbol

Value

IF(AV)

10 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.38 V

650 V, 10 A high surge silicon carbide power Schottky diode

STPSC10H065G2

Datasheet

DS13663 - Rev 1 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com