K

A1

A2

TO-247 LL

K

A2

A1

Product label

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Low Forward voltage drop

•

Operating Tj from -40 °C to +175 °C

•

ECOPACK2 compliant component

•

Power efficient product

Applications

•

Air conditioning equipment

•

PFC

•

OBC (On board battery chargers)

•

Server Power supplies

•

Telecom power

Description

The STPSC20065C is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost

performance in hard switching conditions. Its high forward surge capability ensures

good robustness during transient phases.

Product status

STPSC20065C

Product summary

Symbol

Value

IF(AV)

2 X 10 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.30 V

650 V, dual 10 A, power Schottky silicon carbide diode

STPSC20065C

Datasheet

DS12994 - Rev 1 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com