6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

POWER SUPPLY

VVDD1

High-side power-supply voltage

VDD1 to GND1

3.0

5

27

V

VVDD2

Low-side power supply voltage

VDD2 to GND2

2.7

3.3

5.5

V

ANALOG INPUT

VIN

Input voltage

IN to GND1, VDD1 ≤ 4.3 V

–0.4

VDD1 – 0.3

V

IN to GND1, VDD1 > 4.3 V

–0.4

4

VREF

Reference voltage, window comparator mode

REF to GND1

20

300

mV

Reference voltage, positive-comparator mode

Low hysteresis mode

20

450

High hysteresis mode

(Cmp0 only)

600

2700(1)

Reference voltage headroom

VDD1 – VREF

1.4

V

Filter capacitance on REF pin

20

100

nF

DIGITAL I/O

Digital input voltage

LATCH pin

GND2

VDD2

V

Digital output voltage

OUT to GND2

GND2

VDD2

V

Sink current

OUT

0

4

mA

TEMPERATURE RANGE

TA

Specified ambient temperature

–40

25

125

°C

(1)

Reference voltages (VREF) >1.6 V require VVDD1 > VVDD1,MIN to maintain minimum headroom (VVDD1 – VREF) of 1.4 V.

6.4 Thermal Information

THERMAL METRIC(1)

D (SOIC)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

116.5

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

52.8

°C/W

RθJB

Junction-to-board thermal resistance

58.9

°C/W

ΨJT

Junction-to-top characterization parameter

19.4

°C/W

ΨJB

Junction-to-board characterization parameter

58.0

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Power Ratings

PARAMETER

TEST CONDITIONS

VALUE

UNIT

PD

Maximum power dissipation (both sides)

VDD1 = 25 V, VDD2 = 5.5 V

102

mW

VDD1 = VDD2 = 5.5 V

32

VDD1 = VDD2 = 3.6 V

21

PD1

Maximum power dissipation (high-side)

VDD1 = 25 V

90

mW

VDD1 = 5.5 V

20

VDD1 = 3.6 V

13

PD2

Maximum power dissipation (low-side)

VDD2 = 5.5 V

12

mW

VDD2 = 3.6 V

8

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AMC22C12

SBASAJ8A – JUNE 2022 – REVISED AUGUST 2022

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