IRF840, SiHF840

www.vishay.com

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

4

Document Number: 91070

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

91070_07

101

100

VSD, Source-to-Drain Voltage (V)

0.4

1.0

0.8

0.6

25

°C

150

°C

V

GS = 0 V

1.4

1.2

91070_08

10 µs

100 µs

1 ms

10 ms

T

C = 25 °C

T

J = 150 °C

Single Pulse

VDS, Drain-to-Source Voltage (V)

102

0.1

2

5

2

1

5

10

2

5

25

1

25

10

25

102

25

103

25

104

0.1

Operation in this area limited

by R

DS(on)

91070_09

TC, Case Temperature (°C)

0.0

2.0

4.0

6.0

8.0

25

150

125

100

75

50

Pulse width

≤ 1 µs

Duty factor

≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0

- 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

(Thermal Response)

P

DM

t

1

t

2

Notes:

1. Duty Factor, D = t

1/t2

2. Peak T

j = PDM x ZthJC + TC

10-5

10-4

10-3

10-2

0.1

1

10

102

10

1

0.1

10-3

10-2