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UGF09030P Datasheet(PDF) 2 Page - Cree, Inc

Part # UGF09030P
Description  30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
PDF  7 Pages
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

UGF09030P Datasheet(HTML) 2 Page - Cree, Inc

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UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Maximum Ratings
Rating
Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
VDSS
65
Volts
Gate to Source Voltage
VGSS
+15 to –.5
Volts
Total Device Dissipation @ Tcase = 70
oC
Derate above 70
oC
PD
-
Watts
W/
oC
Storage Temperature Range
Tstg
-65 to
+150
oC
Operating Junction Temperature
TJ
200
oC
Thermal Characteristics
Characteristic
Symbol
Typical
Unit
Thermal Resistance, Junction to Case
ΘJC
-
oC/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(VGS=0, ID=1mA)
BVDSS
65
-
-
Volts
Drain to Source Leakage current
(VDS=26V, VGS=0)
IDSS
-
-
1.0
mA
Gate to Source Leakage current
(VGS=15V, VDS=0)
IGSS
-
-
1.0
µA
Threshold Voltage
(VDS=10V, ID=1mA)
VGS(th)
-
3.5
-
Volts
Gate Quiescent Voltage
(VDS=26 V, ID=350mA)
VGS(Q)
3.0
4.0
6.0
Volts
Drain to Source On Voltage
(VGS=10V, ID=1A)
VDS(on)
-
0.3
-
Volts
Forward Transconductance
(VDS=10V, ID=5A)
Gm
-
-
-
S



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