AP2331TD

Document number: DS40136 Rev. 1 - 2

2 of 11

www.diodes.com

October 2017

© Diodes Incorporated

AP2331TD

AP2331TD

Pin Descriptions

Pin Name

Pin Number

Functions

GND

1

GND

OUT

2

Switch Output Pin

IN

3

Voltage Input Pin

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Ratings

Unit

ESD HBM

Human Body Model ESD Protection

3

kV

ESD MM

Machine Model ESD Protection

300

V

VIN

Input Voltage Relative to GND

6.5

V

VOUT

Output Voltage Relative to GND

VIN +0.3

V

ILOAD

Maximum Continuous Load Current

Internal Limited

A

TJMAX

Maximum Junction Temperature

+150

°C

TST

Storage Temperature Range (Note 4)

-65 to +150

°C

Note:

4. UL Recognized Rating from -30°C to +70°C (Diodes Incorporated qualified TST from -65°C to +150°C).

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

VIN

Input Voltage Relative to GND

2.7

5.2

V

IOUT

Output Current

0

0.2

A

TA

Operating Ambient Temperature

-40

+85

C

Electrical Characteristics (@TA = +25°C, VIN = 5V, unless otherwise specified.)

Symbol

Parameter

Test Conditions (Note 5)

Min

Typ

Max

Unit

VUVLO

Input UVLO

VIN rising

2.35

—

2.65

V

IQ

Input Quiescent Current

Above UVLO, IOUT = 0

—

85

125

µA

IREV

Reverse Leakage Current

VIN = 0V, VOUT = 5V, IREV at VIN

—

0.01

0.10

µA

RDS(ON)

Switch On-resistance

VIN = 5V, IOUT = 0.2A

100

250

350

mΩ

ILIMIT

Over-load Current Limit

VIN = 5V, VOUT = 4V

0.3

0.4

0.5

A

IOS

Short-circuit Current

OUT shorted to ground

0.3

0.4

0.5

A

IROCP

Reverse-current Trigger Point

VIN = 5.0V, VOUT = 5.2V

—

0.20

0.25

A

tTRIG

Deglitch Time from Reverse Current Trigger

to MOSFET Turn Off

(Note 6)

0.5

0.7

1.0

ms

VOVP

Output Over-voltage Trip Point

(Note 7)

5.3

—

5.6

V

tOVP

Debounce Time from Output Over-voltage

to MOSFET Turn Off

—

—

15

—

µs

VREC

Recovery after Turn-off from ROCP and

OVP

—

—

101%*VIN

—

V

tON

Output Turn-on Time (Note 8)

CL = 0.1µF, RLOAD = 20Ω

(UVLO to 90% VOUT-NOM)

—

0.7

—

ms

TSHDN

Thermal Shutdown Threshold

VIN = 2.7V to 5.25V

—

+150

—

C

THYS

Thermal Shutdown Hysteresis

—

—

+20

—

C

θJA

Thermal Resistance Junction-to-Ambient

(Note 9)

SOT23

—

215

—

°C/W

SC59

—

255

—

°C/W

Notes:

5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

6. When reverse current triggers at IROCP = 0.20A, the reverse current is continuously clamped at IROCP for 0.7ms deglitch time until MOSFET is turned off.

7. During output over-voltage protection, the output draws approximately 60µA current.

8. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between VIN/0.2ms to

VIN/1ms.

9. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.