APR34709

Document number: DS41354 Rev. 5 - 3

6 of 13

www.diodes.com

June 2022

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APR34709

Electrical Characteristics (@TA = +25°C, unless otherwise specified.) (continued)

MOSFET Static Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDSS(BR)

Drain to Source Breakdown

Voltage

VGS = 0V, ID = 0.25mA

60

—

—

V

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 0.25mA

0.7

1.3

2

V

IDSS

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

—

—

1

µA

IGSS

Gate to Source Leakage Current

VGS = 4.5V, VDS = 0V

—

—

±50

µA

RDS(ON)

Drain to Source On-State

Resistance

VGS = 4.5V, ID = 3A

—

8

—

m

Ω

MOSFET Dynamic Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

VGS = 0V, VDS = 25V

f = 1MHz

—

1872

—

pF

Coss

Output Capacitance

—

506

—

Crss

Reverse Transfer Capacitance

—

43

—

Qgs

Gate to Source Charge

VGS = 0V to 10V, VDD = 25V

ID = 15A

—

3.1

—

nC

Qgd

Gate to Drain Charge

(Miller Charger)

—

4.8

—

Qg

Total Gate Charge

VGS = 4.5V

—

15

—

Rg

Gate Resistance

—

—

1.8

—

Ω