AR2003FV

6 of 15

December 2014

Document number: DS37473 Rev. 3 - 2

www.diodes.com

© Diodes Incorporated

AR2003FV

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VAVDD

Internal Regulator Output

VCC = 5.5V

–

4.5

–

V

VCC = 12V

–

4.7

–

V

ICCSTART

Supply Current (Under Voltage)

VCC = 2.6V

–

160

220

µA

ICCSTANDBY

Supply Current (Disabled)

VCC = 5.5V, REN/OFF = 0Ω

–

380

500

VCC = 12V, REN/OFF = 0Ω

–

450

600

ICCON

Supply Current (Enabled)

VCC = 5.5V, REN/OFF = 100kΩ,

Cgate=0.

–

1.5

2

mA

VCC = 12V, REN/OFF = 100kΩ,

Cgate=0.

–

1.8

2.5

VCC = 5.5V, fsw=100kHz,

Cgate=3300pf

–

3.2

4.2

VCC = 12V, fsw=100kHz,

Cgate=3300pf

–

5

7

VEN-ON

TOFF/EN Turn-on Threshold, Rising

TOFF/EN driven, VTON > 0.6V

1.31

1.4

1.49

V

VEN-OFF

TOFF/EN Turn-off Threshold, Falling

TOFF/EN driven, VTON < 0.2V

0.55

0.6

0.65

IEN-START

TOFF/EN Input Current, Disabled

RTOFF=50K

-21.5

-20

-18.5

µA

IEN-ON

TOFF/EN Input Current, Enabled

RTOFF=100K

-10.7

-10

-9.3

Under-Voltage Lockout (UVLO)

UVLOTH

VCC Under Voltage Lockout Threshold Rising

–

2.8

3.0

3.20

V

UVLOHYS

VCC Under Voltage Lockout Threshold

Hysteresis

–

–

200

–

mV

MOSFET Voltage Sensing

VTHARM

Gate Re-arming Threshold

VD to GND, Rising

1.3

1.5

1.7

V

VTHON

Gate Turn-on Threshold

(VD-VS) falling, VS = 0V

-220

-150

-80

mV

VTHOFF HV

Gate Turn-off Threshold

(VD-VS) rising, VS = 0V, VCC ≥

4.2V

-6

-4

-2

mV

VTHOFF LV

Gate Turn-off Threshold

VD-VS) rising, VS = 0V, VCC <

4.2V

-30

-20

-10

TDON

Gate Turn-on Propagation Delay

From VTHON to Gate > 1V

–

30

50

ns

TDOFF

Gate Turn Off Propagation Delay

From VTHOFF to Gate < 4V

–

30

60

ns

Minimum On Time

TON-LR

Minimum On Time at Low Resistance

RTON = 8.25KΩ

0.26

0.34

0.42

µs

TON-HR

Minimum On Time at High Resistance

RTON = 100KΩ

2.25

3

3.75

µs

Minimum Off Time

TOFF-LR

Minimum Off Time at Low Resistance

RTOFF = 100KΩ

0.8

1.4

2

µs

TOFF-HR

Minimum Off Time at High Resistance

RTOFF = 200KΩ

7.5

10

12.5

µs

TOFF-LV

Minimum Off Time at Low Voltage

VEN/TOFF=1V

0.8

1.4

2

µs

TOFF-HV

Minimum Off Time at High Voltage

VEN/TOFF=2V

7.5

10

12.5

µs

TOFF-OV

Minimum Off Time at Over Voltage

2V<VEN/TOFF<VAVDD

7.5

10

12.5

µs