BAV5004WS

Document number: DS30733 Rev. 4 - 3

2 of 5

www.diodes.com

September 2021

© Diodes Incorporated

BAV5004WS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5) (See figure 1)

PD

200

mW

Thermal Resistance Junction to Ambient Air (Note 5)

RθJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

400

–

–

V

IR = 150A

Forward Voltage

VF

–

–

–

–

0.93

1.09

1.29

V

IF = 20mA

IF = 100mA

IF = 200mA

Reverse Current (Note 6)

IR

–

–

–

1

100

μA

μA

VR = 240V

VR = 240V, TJ = +150°C

Total Capacitance

CT

–

0.9

2.5

pF

VR = 0V, f = 1.0MHz

Reverse Recovery Time

trr

–

–

50

ns

IF = IR = 30mA,

Irr = 3.0mA, RL = 100Ω

Notes:

5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.