BCX5616Q

Datasheet number: DS37024 Rev. 3 – 2

2 of 7

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November 2020

© Diodes Incorporated

BCX5616Q

Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

6

V

Continuous Collector Current

IC

1

A

Peak Pulse Collector Current

ICM

2.0

Continuous Base Current

IB

100

mA

Peak Pulse Base Current

IBM

200

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

1

W

(Note 6)

1.5

(Note 7)

2.0

Thermal Resistance, Junction to Ambient Air

(Note 5)

RθJA

125

°C/W

(Note 6)

83

(Note 7)

60

Thermal Resistance, Junction to Lead

(Note 8)

RθJL

13

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 9)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes:

5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.

7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.