STP35N65DM2 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STP35N65DM2

Description	N-channel 650 V, 0.093 typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

STP35N65DM2

Electrical ratings

DocID030872 Rev 2

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

250

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1)Pulse width is limited by safe operating area.

(2)ISD ≤ 32 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS

(3)VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive

EAS(1)

Single pulse avalanche energy

1150

Notes:

(1)Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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