STP46N60M6 datasheet(2/13 Pages) STMICROELECTRONICS

Part #	STP46N60M6

Description	N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220 package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 13 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

ID(1)

Drain current (pulsed)

126

PTOT

Total power dissipation at Tcase = 25 °C

250

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 36 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive

(pulse width limited by TJmax)

5.2

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

760

STP46N60M6

Electrical ratings

DS12394 - Rev 3

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