STU3N65M6 datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STU3N65M6

Description	N-channel 650 V, 1.4 typ., 3.5 A MDmesh™ M6 Power MOSFET in an IPAK package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

3.5

Drain current (continuous) at TC = 100 °C

2.2

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 3.5 A, di/dt=400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V

3. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.78

°C/W

Rthj-amb

Thermal resistance junction-ambient

100

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

Eas

Single pulse avalanche energy (starting Tj=25°C, ID= IAR, VDD=50 V)

STU3N65M6

Electrical ratings

DS11590 - Rev 2

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