STWA50N65DM2AG datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STWA50N65DM2AG

Description	Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh™ DM2 in TO-247 long leads package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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December 2017

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This is information on a product in full production.

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STWA50N65DM2AG

Automotive-grade N-

channel 650 V, 0.070 Ω typ., 38 A

Power MOSFET MDmesh™ DM2 in TO-247 long leads package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

PTOT

STWA50N65DM2AG

650 V

0.087 Ω

38 A

300 W



AEC-Q101 qualified



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STWA50N65DM2AG

50N65DM2

TO-247 long leads

Tube

The HTRB test was performed at 80% V(BR)DSS in compliance with AEC-Q101 rev. C. All the

other tests were performed according to rev. D.

D(2)

G(1)

S(3)

AM01476v1_No_tab

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