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STWA68N65DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STWA68N65DM6
Description  N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA68N65DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
tp=10 µs
tp=1 µs
tp=100 µs
tp=1 ms
V(BR)DSS
tp=10 ms
GADG060520201023SOA
102
101
100
10-1
10-2
10-1
100
101
102
ID
(A)
VDS (V)
single pulse
TC = 25 °C
TJ ≤ 150 °C
VGS=10 V
RDS(on) max.
IDM
Operation
in
this
area
is limited
by
RDS(on)
Figure 2. Maximum transient thermal impedance
GADG060520201023ZTH
10-1
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
ton
T
duty = ton / T
RthJC = 0.29 °C/W
ZthJC
(°C/W)
duty=0.5
Single pulse
0.05
3
2
4
Figure 3. Typical output characteristics
GADG060520201021OCH
160
120
80
40
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =7 V
VGS =8 V
VGS =9, 10 V
VGS =6 V
Figure 4. Typical transfer characteristics
GADG060520201021TCH
160
120
80
40
0
0
2
4
6
8
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical gate charge characteristics
GADG060520201022QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
16
32
48
64
80
96
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 520 V
Qgs
Qgd
ID = 48 A
Qg
VDS
Figure 6. Typical drain-source on-resistance
GADG060520201019RID
54
53
52
51
50
49
0
10
20
30
40
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STWA68N65DM6
Electrical characteristics (curves)
DS12367 - Rev 3
page 5/12



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