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STWA72N60DM2AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STWA72N60DM2AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() D(2) G(1) S(3) AM01476v1_No_tab Features Order code VDS RDS(on) max. ID PTOT STWA72N60DM2AG 600 V 42 mΩ 66 A 446 W • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STWA72N60DM2AG Product summary Order code STWA72N60DM2AG Marking 72N60DM2 Package TO-247 long leads Packing Tube Automotive-grade N-channel 600 V, 37 mΩ typ., 66 A, MDmesh™ DM2 Power MOSFET in a TO-247 long leads package STWA72N60DM2AG Datasheet DS12726 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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