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STWA75N65DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STWA75N65DM6
Description  N-channel 650 V, 33 m typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA75N65DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG210920210955SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp=10 µs
tp=1 µs
tp=100 µs
tp=1ms
IDM
V(BR)DSS
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 150 °C
Operation
in
this
area
is
limited
by
R
DS(on)
tp=10 ms
Figure 2. Maximum transient thermal impedance
GADG200920210949ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ZthJC
(°C/W)
0.4
0.05
0.3
ton
T
duty = ton / T
RthJC = 0.26 °C/W
0.2
duty=0.5
0.1
Single pulse
Figure 3. Typical output characteristics
GADG200920210949OCH
250
200
150
100
50
0
0
4
8
12
16
20
ID
(A)
VDS (V)
VGS=6 V
VGS=7 V
VGS=8 V
VGS=9, 10 V
Figure 4. Typical transfer characteristics
GADG200920210949TCH
250
200
150
100
50
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS=20 V
Figure 5. Typical gate charge characteristics
GADG200920210950QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
20
40
60
80
100 120
VDS
(V)
VGS
(V)
Qg (nC)
Qg
Qgs
Qgd
VGS
VDS
VDD= 520 V
ID = 77 A
Figure 6. Typical drain-source on-resistance
GADG200920210951RID
35
34
33
32
31
30
0
10
20
30
40
50
60
70
RDS(on)
(mΩ)
ID (A)
VGS= 10 V
STWA75N65DM6
Electrical characteristics (curves)
DS13828 - Rev 1
page 5/12



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