STF18N65DM2 datasheet(2/12 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

7.6

IDM(2)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

100

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

100

VISO

Insulation withstand voltage (RMS) from all three leads to external heat

sink (t = 1 s, TC = 25 °C)

2500

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Limited by maximum junction temperature

2. Pulse width is limited by safe operating area.

3. ISD ≤ 12 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 400 V

4. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

4.5

°C/W

RthJA

Thermal resistance, junction-to-ambient

62.5

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

2.5

EAS(2)

Single pulse avalanche energy

482

1. Pulse width is limited by TJmax.

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V

STF18N65DM2

Electrical ratings

DS12957 - Rev 2

page 2/12

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