June 2016

DocID029433 Rev 1

1/12

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STFH40N60M2

N-

channel 600 V, 0.078 Ω typ., 34 A MDmesh™ M2

Power MOSFET in a TO-220FP wide creepage package

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features

Order codes

STFH40N60M2

650 V

0.088 Ω

34 A



Extremely low gate charge





100% avalanche tested



Zener-protected



Wide creepage distance of 4.25 mm

between the pins

Applications



Switching applications



LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

The TO-220FP wide creepage package provides

increased surface insulation for Power MOSFETs

to prevent failure due to arcing, which can occur

in polluted environments.

Table 1: Device summary

Order codes

Marking

Package

Packaging

STFH40N60M2

40N60M2

TO-220FP wide creepage

Tube

AM15572v1_no_tab

D(2)

G(1)

S(3)