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STN6N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STN6N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() SOT223-2 1 3 2 D(3) G(1) S(2) NG1D3S2_SOT223 Features Order code VDS RDS(on) max. ID STN6N60M2 600 V 1.25 Ω 5.5 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STN6N60M2 Product summary Order code STN6N60M2 Marking 6N60M2 Package SOT223-2 Packing Tape and reel N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package STN6N60M2 DS12926 - Rev 2 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com |
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