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FODM291AR2 Datasheet(PDF) 3 Page - ON Semiconductor |
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FODM291AR2 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 8 page ![]() FODM291 Series www.onsemi.com 3 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified Symbol Parameter Device Conditions Min. Typ. Max. Units EMITTER IF Forward Current FODM291 IF = 20 mA 1.2 1.4 V IR Reverse Current FODM291 VR = 4 V 10 mA Cin Input Capacitance All V = 0 V, f = 1 kHz 30 250 pF DETECTOR BVCEO Collector−Emitter Breakdown Voltage All IC = 0.1 mA, IF = 0 mA 80 V BVECO Emitter−Collector Breakdown Voltage All IE = 0.1 mA, IF = 0 mA 7 V ICEO Collector Dark Current All VCE = 20 V, IF = 0 mA 100 nA TRANSFER CHARACTERISTICS TA=25°C unless otherwise specified Symbol Parameter Device Conditions Min. Typ. Max. Units CTRCE Current Transfer Ratio (collector−emitter) FODM291A IF = 5 mA, VCE = 5 V 80 160 % FODM291B 130 260 FODM291C 200 400 FODM291D 300 600 VCE(SAT) Collector−Emitter Saturation Voltage FODM291 series IF = 10 mA, IC = 1.0 mA − 0.1 0.2 V SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified Symbol Parameter Conditions Min. Typ. Max. Units tR Output Rise Time (10%−90%) IC = 2 mA, VCE = 2 V, RL = 100 W 5 18 ms tF Output Fall Time (90%−10%) IC = 2 mA, VCE = 2 V, RL = 100 W 5 18 ms ISOLATION CHARACTERISTICS Symbol Parameter Conditions Min. Typ. Max. Units VISO Input−Output Isolation Voltage Frequency = 60 Hz, t = 1.0 min, 3,750 VACRMS RISO Isolation Resistance VI−O = 500 V (Note 3) 5 x 1010 W CISO Isolation Capacitance Frequency = 1 MHz 0.3 1.0 pF 3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together. 4. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration. |
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