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30TPS08PBF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 30TPS08PBF
Description  isc Thyristors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

30TPS08PBF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  30TPS08PBF Datasheet HTML 1Page - Inchange Semiconductor Company Limited 30TPS08PBF Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
30TPS08PBF
DESCRIPTION
·
It is suitable to fit all modes of control found in applications
such as overvoltage crowbar protection,motor control circuits
in power tools and kitchen aids,in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation circuits etc.
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(AV)
Average on-stage current,TC=75℃
20
A
IRMS
RMS on-state current, TC=75℃
30
A
ITSM
Surge non-repetitive on-state current
300
A
PG(AV)
Average gate power dissipation, TJ = 125°C
2.0
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM,
VRM=VRRM, Tj=125℃
0.5
10
mA
IDRM
Repetitive peak off-state current
VDM=VDRM,
VDM=VDRM , Tj=125℃
0.5
10
mA
VTM
On-state voltage
ITM= 20A
1.3
V
IGT
Gate-trigger current
VD= 6V;
45
mA
VGT
Gate-trigger voltage
2.0
V
IH
Holding current
IT= 1A, Gate Open
100
mA
Rth(j-c)
Thermal resistance
Junction to case
0.8
℃
/W


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