LM317L, NCV317L

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2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input−Output Voltage Differential

VI−VO

40

Vdc

Power Dissipation

Case 29 (TO−92)

TA = 25°C

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Case 751 (SOIC−8) (Note 1)

TA = 25°C

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

PD

RqJA

RqJC

PD

RqJA

RqJC

Internally Limited

160

83

Internally Limited

180

45

W

°C/W

°C/W

W

°C/W

°C/W

Maximum Junction Temperature

TJMAX

+150

°C

Storage Temperature Range

Tstg

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 24 for Thermal Resistance

variation versus pad size.

2. This device series contains ESD protection and exceeds the following tests:

Human Body Model, 2000 V per MIL STD 883, Method 3015.

Machine Model Method, 200 V.

18k

6.8V

6.8V

350

300

300

300

3.0k

300

70

200k

2.5

60

50

130

8.67k

500

400

2.4k

12.8k

Vout

5.1k

6.3V

2.0k

6.0k

Adjust

Vin

180 180

10

p

F

10

p

F

Figure 1. Representative Schematic Diagram