ZXTP4001Z

Datasheet Number: DS35712 Rev. 1 - 2

3 of 5

www.diodes.com

February 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXTP4001Z

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-60

-

-

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

-60

-

-

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.3

-

V

IE = -100µA

Collector Cut-off Current

ICBO

-

-

-50

nA

VCB = -60V

Emitter Cut-off Current

IEBO

-

-

-50

nA

VEB = -7V

Static Forward Current Transfer Ratio (Note 7)

hFE

60

100

-

-

-

-

-

-

IC = -85mA, VCE = -0.1V

IC = -150mA, VCE = -0.15V

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

-

-0.72

-0.95

V

IC = -150mA, VCE = -0.15V

Delay Time

t(d)

-

300

-

ns

VCC = -48V, IC = -150mA,

-IB2 = 1.5mA, VCE(ON) = -0.15V

Rise Time

t(r)

-

420

-

ns

Storage Time

t(s)

-

352

-

ns

Fall Time

t(f)

-

281

-

ns

Storage Time

t(s)

-

48

-

ns

VCC = -48V, IC = -150mA,

-IB2 = -1.5mA VCE(ON) = - 4V

Fall Time

t(f)

-

245

-

ns

Notes:

7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤ 2%

Electrical Characteristics @TA = 25°C unless otherwise specified

100µ

1m

10m

100m

0

50

100

150

200

250

300

350

100µ

1m

10m

100m

0.2

0.4

0.6

0.8

1.0

100m

1

10

0

5

10

15

20

25

30

35

40

45

50

125°C

h

FE

v I

C

V

CE

= -0.15V

-55°C

25°C

85°C

-I

C

Collector Current (A)

125°C

V

BE(on)

v I

C

V

CE

= -0.15V

85°C

25°C

-55°C

-I

C

Collector Current (A)

Capacitance v Voltage

f = 1MHz

Cobo

-Voltage(V)