ILD1, ILD2, ILD5, ILQ1, ILQ2

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Vishay Semiconductors

Rev. 2.0, 10-Mar-2021

3

Document Number: 83646

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

Fig. 1 - Derating Diagram

Fig. 2 - Test Pulse Diagram for Sample Test according

to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

VF

-

1.25

1.65

V

Reverse current

VR = 6 V

IR

-0.01

10

μA

Capacitance

VR = 0 V, f = 1 MHz

CO

-25-

pF

Thermal resistance, junction to lead

TthJL

-

750

-

K/W

OUTPUT

Collector emitter capacitance

VCE = 5 V, f = 1 MHz

CCE

-6.8

-

pF

Collector emitter leakage current

VVCE = 10 V

ICEO

-

5

50

nA

Saturation voltage, collector emitter

IC = 1 mA, IB = 20 μA

VCESAT

-

0.25

0.4

V

DC forward current gain

VCE = 10 V, IB = 20 μA

hFE

200

650

1800

DC forward current gain saturated

VCE = 0.4 V, IB = 20 μA

hFEsat

120

400

600

Thermal resistance, junction to lead

Rthjl

-

500

-

K/W

COUPLER

Capacitance (input to output)

VIO = 0 V, f = 1 MHz

CIO

-0.8

-

pF

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

IC/IF

(collector emitter saturated)

IF =10 mA, VCE = 0.4 V

ILD1

CTRCEsat

-75-

%

ILQ1

CTRCEsat

-75-

%

ILD2

CTRCEsat

-

170

-

%

ILQ2

CTRCEsat

-

170

-

%

ILD5

CTRCEsat

-

100

-

%

IF =10 mA, VCE = 10 V

ILD1

CTRCE

20

80

300

%

ILQ1

CTRCE

20

80

300

%

ILD2

CTRCE

100

200

500

%

ILQ2

CTRCE

100

200

500

%

ILD5

CTRCE

50

130

400

%

TSI - Safety Temperature (°C)

0

50

100

150

200

250

300

350

400

450

0

25

50

75

100

125

150

175

Phototransistor

PSO (mW)

IR-diode

ISI (mA)

t

13930

t1, t2 = 1 s to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

Vpd

VIOWM

VIORM

0

t1

ttest

tTr = 60 s

tstres

t3

t4

t2