SFH691AT

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Vishay Semiconductors

Rev. 2.1, 12-Apr-13

2

Document Number: 83719

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to reflow profile for soldering conditions for surface mounted devices.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

DC forward current

IF

± 50

mA

Surge forward current

tp 10 μs

IFSM

± 2.5

A

Total power dissipation

Pdiss

80

mW

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

50

mA

tp  1 ms

IC

100

mA

Total power dissipation

Pdiss

150

mW

COUPLER

Isolation test voltage between emitter

and detector

1 s

VISO

3750

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

1012



VIO = 500 V, Tamb = 100 °C

RIO

1011



Storage temperature range

Tstg

- 55 to + 150

°C

Ambient temperature range

Tamb

- 55 to + 100

°C

Junction temperature

Tj

100

°C

Soldering temperature (1)

max. 10 s dip soldering distance

to seating plane

1.5 mm

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = ± 5 mA

VF

1.15

1.4

V

Capacitance

VR = 0 V, f = 1 MHz

CO

29

pF

Thermal resistance

Rthja

750

°C/W

OUTPUT

Collector emitter leakage current

VCE = 20 V

ICEO

100

nA

Collector emitter capacitance

VCE = 5 V, f = 1 MHz

CCE

5pF

Thermal resistance

Rthja

500

°C/W

COUPLER

Collector emitter saturation voltage

IF = ± 10 mA, IC = 2 mA

VCEsat

0.1

0.3

V

Coupling capacitance

f = 1 MHz

CC

0.4

pF

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Current transfer ratio

IF = ± 5 mA, VCE = 5 V

CTR

50

120

300

%

CTR1/CTR2

CTR1 = IC1/IF1, CTR2 = IC2/IF2

0.3

3