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MJE5852 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJE5852
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE5852 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
MJE5852
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
: VCEO= -400V(Min)
·
Low Collector-Emitter Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching Regulators
·
Inverters
·
Solenoid and relay drivers
·
Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Base Voltage
-450
V
VCEO(SUS)
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-6.0
V
IC
Collector Current-Continuous
-8.0
A
IB
Base Current- Continuous
-4.0
A
PC
Collector Power Dissipation
@TC=25℃
80
W
Tj
Junction Temperature
-65~150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.25
℃
/W


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