5 / 10 page
GS75232
Globaltech Semiconductor
www.globaltechsemi.com
5
GS75232
Receiver Section
Symbol
Parameter
Test Conditions
Min
Max
Unit
Positive-Going
VT+
Threshold Voltage
1.75
2.25
V
Negative-Going
VT-
Threshold Voltage
0.75
1.25
V
VI= 0.75V,
IOL=-0.5mA
2.6
5
Input Open,
VOH
High Level Output
Voltage
IOL = -0.5 mA
2.6
5
V
VOL
Low Level Output Voltage VI= 3V, IOL = 10 mA
-
0.45
V
VI= 25V
3.6
8.3
IIH
High-Level Input Current
VI= 3V
0.43
-
mA
VI= -25V
-3.6
-8.3
IIL
Low-Level Input Current
VI= -3V
-0.43
-
mA
Short-Circuit
-3
IOS
Output Current
(tip)
mA
Receiver Switching Characteristic (VCC = 5V)
Symbo
l
Parameter
Test Conditions
Min
Max
Unit
tPLH
Propagation Delay Time,
Low-To-High-Level Output
CL = 15 ρF
RL = 3.9 kΩ
-
150
ns
tPHL
Propagation Delay Time,
High -To- Low -Level Output
CL = 15 ρF
RL = 390 kΩ
-
50
ns
tTLH
Transition Time,
Low-To-High-Level Output
CL = 15 ρF
RL = 3.9 kΩ
-
175
ns
tTHL
Transition Time,
High -To- Low -Level Output
CL = 15 ρF
RL = 390 kΩ
-
20
ns
Typical Performance Characteristics
PULSE
GENERATOR
(See Note A)
OUTPUT
RECEIVER
CL
RL
PULSE
GENERATOR
(See Note A)
OUTPUT
DRIVER
CL
RL
INPUT
OUTPUT
3V
0V
VOH
VOL
1.5V
1.5V
10ns
50%
50%
tTHL
tTLH
tPLH
tPLH
Voltage Waveform
INPUT
OUTPUT
3V
0V
VOH
VOL
50%
50%
10ns
1.5V
1.5V
tTHL
tTLH
tPLH
tPLH
10%
10%
90%
90%
Tw=20us, Voltage Waveform
Note A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω
B. C included probe and jig capacitance.
C. All diodes are 1N3064 or equivalent.
Fig1. Propagation and Transition Times
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
