Datasheet

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TSZ02201-0RAR1G200030-1-2

© 2012 ROHM Co., Ltd. All rights reserved.

4/40

20.Nov.2014 Rev.003

TSZ22111･15･00

BA4580Rxxx BA4584FV BA4584Rxx

Electrical Characteristics

○

BA4580R (Unless otherwise specified VCC=+15V, VEE=-15V, TA=25℃)

Parameter

Symbol

Limits

Unit

Condition

Min

Typ

Max

Input Offset Voltage

(Note 10)

VIO

-

0.3

3

mV

RS≤ 10kΩ

Input Offset Current

(Note 10)

IIO

-

5

200

nA

-

Input Bias Current

(Note 11)

IB

-

100

500

nA

-

Large Signal Voltage Gain

AV

90

110

-

dB

RL≥ 10kΩ, OUT=±10Ｖ

Maximum Output Voltage

VOM

±12

±13.5

-

V

RL≥ 2kΩ

Input Common-mode Voltage Range

VICM

±12

±13.5

-

V

-

Common-mode Rejection Ratio

CMRR

80

110

-

dB

RS≤ 10kΩ

Power Supply Rejection Ratio

PSRR

80

110

-

dB

RS≤ 10kΩ

Supply Current

ICC

-

6

9

mA

RL=∞, All Op-Amps, VIN+=0V

Slew Rate

SR

-

5

-

V/μs

RL≥ 2kΩ

Gain Bandwidth Product

GBW

-

10

-

MHz

f=10kHz

Unity Gain Frequency

fT

-

5

-

MHz

RL=2kΩ

Total Harmonic Distortion+ Noise

THD+N

-

0.0005

-

%

AV=20dB, OUT=5Vrms

RL=2kΩ

f=1kHz, 20Hz~20kHz BPF

Input Referred Noise Voltage

VN

-

5

-

Hz

nV/

RS=100Ω, VI=0V, f=1kHz

-

0.8

-

μVrms RIAA, RS=2.2 kΩ, 30kHz LPF

Channel Separation

CS

-

110

-

dB

R1=100Ω, f=1kHz

(Note 10) Absolute value

(Note 11) Current direction: Since first input stage is composed with PNP transistor, input bias current flows out of IC.