TC25C25 datasheet(2/7 Pages) TELCOM

2 / 7 page

4-112

TELCOM SEMICONDUCTOR, INC.

ELECTRICAL CHARACTERISTICS: Unless otherwise stated, these specifications apply for – 40

°C < TA <

+85

°C for the TC25C25Exx; and 0°C <TA < +70°C for the TC35C25Cxx;

VIN and VDD = 16V; RT = 3.7kΩ; CT = 1000pF; RD = 760Ω.

Parameter

Test Conditions

Min

Typ

Max

Units

Reference Section

Output Voltage

TJ = 25°C, IO = 1mA

3.9

4.1

Line Regulation

VIN = 8V to 18V

—

±4

±10

Load Regulation

II = 1mA to mA

—

±4

±15

Temp Coefficient

Note 1

—

±0.01

±0.4

mV/

°C

VREF

Worst Case

3.85

4.15

Long Term Drift

TJ = 25°C, (Note 1)

—

±50

—

mV/1000Hrs

Short Circuit

VREF to GND

Output Noise

TJ = 25°C, 10 Hz ≤ f ≥ 10 kHz, (Note 1)

—

µV(rms)

Oscillator Section

Initial Accuracy

TJ = 25°C, at 97 kHz

—

±2

±3%

Voltage Coefficient

VIN = 8V to 18V

—

±0.01

±0.1

%/V

Temp Coefficient

Note 1

—

±0.025

±0.06

°C

OSC Ramp Amplitude

2.9

3.2

3.4

Reset Switch RDS (ON)

TJ = 25°C30

Ω

Clock Amplitude

fosc = 100kHz, RL = 1MΩ, (Note 1)

4.9

5.5

6.7

Clock Min Width

TJ = 25°C, RD = 0Ω, (Note 1)

—

170

200

nsec

CT = 100pF, RT = 1Ω

Sync Threshold

RT Pin Tied to VREF, CT Pin at GND

1.8

2.2

2.8

Sync Input Current

Sync Voltage = 4V, V(RT) = 4V

—

±1

µA

Min Sync Pulse Width

TJ = 25°C, Sync Amplitude = 5V, (Note 1)

—

130

175

nsec

Max OSC Freq

RT = 1Ω, CT = 100pF, RD = 0Ω, (Note 1)

1.0

—

MHz

Error Amplifier Section (VCM = 2.5V)

Input Offset Voltage

—

±5

±15

Input Bias Current

TJ = 25°C—

±50

±200

Input Offset Current

TJ = 25°C—

±25

±100

DC Open Loop Gain

RL = 100kΩ

—

Gain Bandwidth Product

Note 1

0.7

0.9

1.2

MHz

Output Low Level

RL = 100kΩ (N Channel)

—

Output High Level

RL = 100kΩ (NPN)

4.9

5.4

5.9

CMRR

VCM = 0.5 to 4.7V

—

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ............................................................ 18V

Maximum Chip Temperature ................................... 150

°C

Storage Temperature ............................ – 65

°C to +150°C

Lead Temperature (10 sec) ..................................... 300

°C

Package Thermal Resistance

PDIP RθJ-A ..................................................................... 125°C/W

PDIP RθJ-C ........................................................................ 45°C/W

SOIC RθJ-A ..................................................................... 250°C/W

SOIC RθJ-A ........................................................................ 75°C/W

Operating Temperature

25C2x ........................................ – 40

°C ≤ TA ≤ +85°C

35C2x ............................................. 0

°C ≤ TA ≤ +70°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

BICMOS PWM CONTROLLERS

TC25C25

TC35C25

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