632

Schottky Barrier Diodes (SBD)

MA3D752, MA3D752A (MA7D52, MA7D52A)

Silicon epitaxial planar type (cathode common)

For switching power supply

I Features

• Low forward rise voltage V

F

• TO-220D (Full-pack package) with high dielectric breakdown

voltage

> 5.0 kV

• Easy-to-mount, caused by its V cut lead end

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Repetitive peak

MA3D752

40

V

reverse voltage

MA3D752A

45

Non repetitive peak

MA3D752

40

V

reverse voltage

MA3D752A

45

Average forward current

20

A

Non-repetitive peak forward

120

A

Junction temperature

−40 to +125

°C

Storage temperature

−40 to +125

°C

1 : Anode

2 : Cathode

3 : Anode

TO-220D Package

Note) * : Half sine-wave; 10 ms/cycle

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

MA3D752

°C5

mA

MA3D752A

°C5

Forward voltage (DC)

0.55

V

Thermal resistance

Direct current (between junction and case)

3

°C/W

I Electrical Characteristics T

a

= 25°C

Note) Rated input/output frequency: 100 MHz

Internal Connection

123

1

9.9

± 0.3

4.6

± 0.2

2.9

± 0.2

0.8

± 0.1

1.4

± 0.2

23

φ 3.2 ± 0.1

2.6

± 0.1

0.55

± 0.15

2.54

± 0.3

5.08

± 0.5

1.6

± 0.2

Note) The part number in the parenthesis shows conventional part number.