Tyco/Electronics

Raychem Corporation

308 Constitution Drive

Menlo Park, CA 94025

800-227-4856

FAX 800-227-4866

PolySwitch®

SiBar

Thyristor Surge Protectors

PRODUCT: TVB270SC

DOCUMENT: 24271

PCN: 179059

REV LETTER: B

REV DATE: AUGUST 16, 2001

PAGE NO.: 2 OF 2

DEVICE RATINGS @ 25º C (Both Polarities)

Parameter

Symbol

Value

Units

Off-State Voltage, Maximum at ID = 5 µA

VDM

270

V

Non-Repetitive Peak Impulse Current

10x1000 µsec

Double exponential waveform (Notes 1 and 2)

10/560 µsec

10/160 µsec

2/10 µsec

100

100

200

500

A

A

A

A

Critical Rate of Rise of On-State Current

Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak

di/dt

250

A/µs

DEVICE THERMAL RATINGS

Storage Temperature Range

TSTG

-65 to 150

ºC

Operating Temperature Range

Blocking or conducting state

TA

-40 to 125

ºC

Overload Junction Temperature

Maximum; Conducting state only

TJ

+175

ºC

Characteristics

Symbol

Min

Typ

Max

Units

Breakover Voltage

(+25ºC)

VBO

----

310

370

V

Breakover Voltage

(+25ºC)

R=1.0 k

Ω, t = 0.5 cycle (Note 2)

VBO

----

310

370

V

Breakover Voltage Temperature Coefficient

dVBO/dTJ

----

0.08

-----

%/ºC

Off-State Current

(VD1= 50V)

(VD2= VDM)

ID1

ID2

----

----

-----

-----

2.0

5.0

µA

µA

On-State Voltage

(IT=1A)

PW

≤ 300 µsec, Duty Cycle ≤ 2% (Note 2)

VT

----

-----

5.0

V

Breakover Current

IBO

----

230

-----

mA

Holding Current

(Note 2)

IH

175

350

----

mA

Critical Rate of Rise of Off-State Voltage

dv/dt

5000

----

----

V/µs

Capacitance

C1

C2

----

----

60

160

----

pF

pF

Note 1. Allow cooling before test second polarity

Note 2. Measured under pulse conditions to reduce heating

VOLTAGE-CURRENT CHARACTERISTIC