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STP19NF20 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP19NF20
Description  N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages
PDF  30 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP19NF20 Datasheet(HTML) 4 Page - STMicroelectronics

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Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
ISD = 15 A, di/dt = 100 A/µs,
VDD = 50 V
(see Figure 17. Test circuit for
inductive load switching and diode
recovery times)
-
125
ns
Qrr
Reverse recovery charge
-
0.55
µC
IRRM
Reverse recovery current
-
8.8
A
trr
Reverse recovery time
ISD = 15 A, di/dt = 100 A/µs,
VDD = 50 V, Tj = 150 °C
(see Figure 17. Test circuit for
inductive load switching and diode
recovery times)
-
148
ns
Qrr
Reverse recovery charge
-
0.73
µC
IRRM
Reverse recovery current
-
9.9
A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
STB19NF20,STD19NF20,STF19NF20,STP19NF20
Electrical characteristics
DS4935 - Rev 7
page 4/30



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