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SDP85N03L Datasheet(PDF) 2 Page - SamHop Microelectronics Corp. |
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SDP85N03L Datasheet(HTML) 2 Page - SamHop Microelectronics Corp. |
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2 / 6 page ![]() E LE CTR ICAL CHAR ACTE R IS TICS (TC 25 C unless otherwise noted) = Parameter Symbol Condition Min Typ Max Unit OFF CHAR ACTER ISTICS Drain-Source Breakdown Voltage BVDSS = VGS 0V, ID 250uA = 30 V Zero Gate Voltage Drain Current IDSS VDS 24V, VGS 0V = = 10 uA Gate-Body Leakage IGSS VGS 16V, VDS 0V = = nA ON CHAR ACTER ISTICS a Gate Threshold Voltage VGS(th) VDS VGS, ID = 250uA = 1 3 V Drain-Source On-State R esistance R DS(ON) VGS = 10V, ID = 37.5A 4 VGS = 4.5V, ID = 30A 7.5 On-State Drain Current ID(ON) VGS = 10V, VDS = 10V 75 56 A S Forward Transconductance FS g VDS = 10V, ID = 37A DYNAMIC CHAR ACTER ISTICS b Input Capacitance CISS CRSS COSS Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ 3800 P F 1750 P F P F 390 SWITCHING CHAR ACTER ISTICS b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 15V, ID = 1A, VGS= 10V VGEN = 60 55 ns ns ns ns 268 233 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS =15V, ID = 85A, VGS =10V nC nC nC Fall Time 2 4 S DP /B 85N03L 1.5 5 5.5 363 95.2 7.2 5.6 100 m ohm m ohm ohm VDS =15V, ID =85A,VGS =10V VDS =15V, ID =85A,VGS =4.5V nC 45 |
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