STG8211 datasheet(3/8 Pages) SAMHOP

Part #	STG8211

Description	Dual N-Channel E nhancement Mode Field Effect Transistor

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 8 page

Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

0.75 1.2

F igure 1. Output C haracteristics

F igure 2. Transfer C haracteristics

V GS , G ate-to-S ource Voltage (V )

V DS , Drain-to-S ource Voltage (V )

0.5

1.5

2.5

25 C

-55 C

125 C

0.3

1.8

1.5

1.2

0.9

0.6

V G S =2.5V

V G S =1.5V

V G S =4V

F igure 4. On-R esistance Variation with

Drain C urrent and Temperature

2.5

2.2

1.9

1.6

1.3

1.0

125

T j( C )

100

V GS =4V

ID=5A

T j, J unction T emperature ( C )

V GS =2.5V

ID=3A

ID, Drain C urrent (A)

F igure 3. On-R esistance vs. Drain C urrent

and G ate V oltage

V GS =4V

V GS =2.5V

150

S T G 8211

Notes

c.Guaranteed by design,not subject to production testing.

b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.

＜

a.Surface Mounted on FR4 Board,t 10sec.

＜

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