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STM6375 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STM6375 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  - 20 P-Channel E nhancement Mode MOS FE T ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 10 V Drain Current-Continuous @ TJ=25 C -Pulsed ID - 8 - 32 -1.7 2.5 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 50 /W C a a a a b 1 2 3 4 8 7 6 5 S S S G D D D D 1 S ep.21,2004 S amHop Microelectronics C orp. S urface Mount Package. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -8A 20 @ V GS = -4.5V 28 @ V GS = -2.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S O-8 1 -20V S T M6375 |
Similar Part No. - STM6375 |
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Similar Description - STM6375 |
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