BF1009SW

1

Jun-28-2001

Silicon N-Channel MOSFET Tetrode

For low noise, high gain controlled

input stages up to 1GHz

Operating voltage 9V

Integrated bias network

VPS05605

4

2

1

3

EHA07215

GND

G1

G2

Drain

AGC

HF

Input

HF Output

+DC

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BF1009SW

JLs

1 = D

2 = S

3 = G1

4 = G2

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

VDS

12

Drain-source voltage

V

mA

25

ID

Continuos drain current

Gate 1/gate 2 peak source current

10

±IG1/2SM

+VG1SE

3

Gate 1 (external biasing)

V

mW

Ptot

Total power dissipation, TS
76 °C

200

Storage temperature

°C

-55 ... 150

Tstg

Tch

150

Channel temperature

Thermal Resistance

Channel - soldering point1)

Rthchs

280

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

Note:

It is not recommended to apply external DC-voltage on Gate 1 in active mode.