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Document Number: 83763

2

Rev. 1.8, 20-Sep-10

TCST1030

Vishay Semiconductors

Transmissive Optical Sensor with

Phototransistor Output

ABSOLUTE MAXIMUM RATINGS

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

OUTPUT (DETECTOR)

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

100

mA

Power dissipation

Tamb

≤ 25 °C

PV

150

mW

Junction temperature

Tj

100

°C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

0

100

200

300

400

95 11088

Tamb - Ambient Temperature (°C)

Coupled device

Phototransistor

IR-diode

150

120

90

60

30

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

COUPLER

Collector current

VCE = 5 V, IF = 10 mA

IC

1.2

2.4

mA

Collector emitter saturation

voltage

IF = 10 mA, IC = 1 mA

VCEsat

0.8

V

INPUT (EMITTER)

Forward voltage

IF = 60 mA

VF

1.25

1.5

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

50

pF

OUTPUT (DETECTOR)

Collector emitter voltage

IC = 1 mA

VCEO

70

V

Emitter collector voltage

IE = 10 μA

VECO

7V

Collector dark current

VCE = 25 V, IF = 0 A, E = 0 lx

ICEO

10

100

nA

SWITCHING CHARACTERISTICS

Turn-on time

IC = 1 mA, VCE = 5 V,

RL = 100

Ω (see figure 2)

ton

15

μs

Turn-off time

IC = 1 mA, VCE = 5 V,

RL = 100

Ω (see figure 2)

toff

10

μs