2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4

4.75

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 12.5 A

115

128

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

1500

-

pF

Coss

Output capacitance

-

115

-

pF

Crss

Reverse transfer capacitance

-

3

-

pF

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

-

225

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

1.8

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 25 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

-

35

-

nC

Qgs

Gate-source charge

-

10

-

nC

Qgd

Gate-drain charge

-

15

-

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 12.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

-

14

-

ns

tr

Rise time

-

9

-

ns

td(off)

Turn-off delay time

-

7

-

ns

tf

Fall time

-

35

-

ns

STB33N60DM6

Electrical characteristics

DS12904 - Rev 2

page 3/14