Electrical characteristics

STW57N65M5, STWA57N65M5

4/16

DocID024050 Rev 2

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

650

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 650 V

V

DS

= 650 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 25 V

±100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

345

V

R

DS(on

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 21 A

0.056

0.063

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-

4200

-

pF

C

oss

Output capacitance

-

115

pF

C

rss

Reverse transfer

capacitance

-9

pF

C

o(er)

(1)

1.

C

o(er)

is a constant capacitance value that gives the same stored energy as C

oss

while V

DS

is rising from 0

to 80% V

DSS

Equivalent output

capacitance energy

related

V

GS

= 0, V

DS

= 0 to 520 V

-93

-

pF

C

o(tr)

(2)

2.

C

o(tr)

is a constant capacitance value that gives the same charging time as C

oss

while V

DS

is rising from 0

to 80% V

DSS

Equivalent output

capacitance time

related

-303

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz, I

D

=0

-

1.3

-

Ω

Q

g

Total gate charge

V

DD

= 520 V, I

D

= 21 A,

V

GS

= 10 V

(see

Figure 17 and 20)

-98

-

nC

Q

gs

Gate-source charge

-

23

nC

Q

gd

Gate-drain charge

-

40

nC