STF4LN80K5

Electrical ratings

DocID027806 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID(1)

Drain current (continuous) at TC = 25 °C

3

A

ID(1)

Drain current (continuous) at TC = 100 °C

1.9

A

ID(2)

Drain current pulsed

12

A

PTOT

Total dissipation at TC = 25 °C

20

W

Viso

Insulation withstand voltage (RMS) from all three leads to

external heat sink. (t = 1 s; TC = 25 °C)

2500

V

dv/dt(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area

(3)ISD≤ 3 A, di/dt≤100 A/μs; VDS peak ≤ V(BR)DSS, V

DD = 400 V.

(4)VDS ≤ 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

0.8

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

160

mJ