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STF100N10F7 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STF100N10F7
Description  N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
PDF  28 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF100N10F7 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
TO-220
D2PAK
I2PAK
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
80
45(1)
80
A
Drain current (continuous) at TC = 100 °C
62
32(1)
70
A
IDM(2)
Drain current (pulsed)
320
180
320
A
PTOT(1)
Total dissipation at TC = 25 °C
120
30
150
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heatsink
(t = 1 s, TC = 25 °C)
2.5
kV
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature range
°C
1. This value is limited by package.
2. Pulse width is limited by safe operating area.
Table 2. Thermal resistance
Symbol
Parameter
Value
Unit
D2PAK
DPAK
TO-220FP
TO-220
I2PAK
Rthj-case
Thermal resistance junction-case
1
1.25
5
1
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
30
50
°C/W
1. When mounted on an 1-inch2 FR-4 board, 2oz CU, t < 10 s.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
EAS
Single pulse avalanche energy
(TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V)
400
mJ
STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7
Electrical ratings
DS9291 - Rev 5
page 2/28



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