STF40N60M2 datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STF40N60M2

Description	N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 18 page

DocID026364 Rev 2

5/18

STF40N60M2, STFI40N60M2, STFW40N60M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 34 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16: Switching

times test circuit for

resistive load and

Figure 21: Switching time

waveform)

20.5

Rise time

13.5

td(off)

Turn-off-delay time

Fall time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

136

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 34 A, VGS = 0

1.6

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 18:

Test circuit for inductive load

switching and diode

recovery times)

440

Qrr

Reverse recovery charge

8.2

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 18: Test circuit

for inductive load switching

and diode recovery times)

568

Qrr

Reverse recovery charge

11.5

µC

IRRM

Reverse recovery current

40.5

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